By Dunwen Zuo, Chuanzhen Huang, Ming Chen, Guo Hun

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Y. : Electrochemical and Solid-State Letters Vol. 11(6) (2008), p. 150. [17] K. Qin, B. Moudgil and C. W. Park: Thin Solid Films Vol. 446 (2004), p. 277. [18] T. Du and V. Desal: Journal of Materials Science Letters Vol. 22 (2003), p. 1623. [19] L. Wang, K. Zhang, Z. Song, and S. Feng: Applied Surface Science Vol. 253 (2007), p. 4951. Key Engineering Materials Vol. 39 Computer Simulation of AISI D2 Orthogonal Cutting Using Finite Element Method L. Yan1,a, F. Jiang1,b and Y. M. cn Keywords: Orthogonal cutting, Finite element method, Material model, Chip morphology Abstract.

S. S. com Keyword: HFCVD, CVD diamond coated SiC compacting dies, working lifetime, processing quality Abstract: Silicon carbide (SiC) is a promising material for fabricating wire compacting dies due to its advantages of light weight and even high wear resistance over the tungsten carbide, which currently is the most popular material used to produce compacting dies. In present study, a layer of CVD diamond film is deposited on the interior-hole surface of compacting dies using the hot filament chemical vapor deposition (HFCVD) method, following by a surface polish process, aiming at further elongating the lifetime of compacting dies and improving the surface quality of produced wires.

This paper presented a study of numerical simulation of AISI D2 orthogonal cutting processes. Cutting experiments were conducted to prove the reliability of the simulation model by comparing the simulated and experimental results in terms of chip geometry and cutting forces. Finite Element Simulation Workpiece Material Model. In order to simulate AISI D2 orthogonal process, the expression of the stress-strain, strain rate and temperature should be obtained. In this study, the power law material constitutive model was used to fit the experimental data of compressive Split Hopkinson Pressure Bar tests (SHPB).

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Anti-Fatigue Design and Manufacturing Technologies I by Dunwen Zuo, Chuanzhen Huang, Ming Chen, Guo Hun
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